SEMICONDUCTOR SUBSTRATE, FIELD-EFFECT TRANSISTOR, AND THEIR PRODUCTION METHODS

Details for Australian Patent Application No. 2003303885 (hide)

Owner SUMITOMO MITSUBISHI SILICON CORPORATION

Inventors KOUGAMI, Hazumu; SHIONO, Ichiro; NINOMIYA, Masaharu

Pub. Number AU-A-2003303885

PCT Number PCT/JP2003/0012

PCT Pub. Number WO2004/070800

Priority 2003-27596 04.02.03 JP

Filing date 6 February 2003

Wipo publication date 30 August 2004

International Classifications

H01L 021/20 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 029/161 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 029/78 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 021/336 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/205 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

23 September 2004 Complete Application Filed

  Priority application(s): 2003-27596 04.02.03 JP

30 September 2004 Application Open to Public Inspection

  Published as AU-A-2003303885

20 October 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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