COMPENSATION FOR HETEROGENEOUS NITROGEN CONCENTRATION IN A NITRIDED SILICON OXIDE LAYER

Details for Australian Patent Application No. 2003299876 (hide)

Owner ADVANCED MICRO DEVICES, INC.

Inventors GRAETSCH, Falk; HERRMANN, Lutz; WIECZOREK, Karsten

Pub. Number AU-A-2003299876

PCT Number PCT/US2003/0411

PCT Pub. Number WO2004/095561

Priority 103 14 504.4 31.03.03 DE; 10/693,024 24.10.03 US

Filing date 22 December 2003

Wipo publication date 19 November 2004

International Classifications

H01L 021/3115 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/314 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/316 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/66 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof - Testing or measuring during manufacture or treatment

Event Publications

27 May 2004 Complete Application Filed

  Priority application(s): 103 14 504.4 31.03.03 DE; 10/693,024 24.10.03 US

16 December 2004 Application Open to Public Inspection

  Published as AU-A-2003299876

15 December 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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