SCHOTTKY POWER DIODE COMPRISING A SICOI SUBSTRATE AND THE METHOD OF PRODUCING ONE SUCH DIODE

Details for Australian Patent Application No. 2003233372 (hide)

Owner COMMISSARIAT A L'ENERGIE ATOMIQUE SOITEC

Inventors DAVAL, Nicolas; TEMPLIER, Francois; BILLON, Thierry

Pub. Number AU-A-2003233372

PCT Number PCT/FR03/00787

PCT Pub. Number WO2003/077321

Priority 02/03165 14.03.02 FR

Filing date 12 March 2003

Wipo publication date 22 September 2003

International Classifications

H01L 029/872 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

28 August 2003 Complete Application Filed

  Priority application(s): 02/03165 14.03.02 FR

30 October 2003 Application Open to Public Inspection

  Published as AU-A-2003233372

13 January 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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