COMPOUND SEMICONDUCTOR MULTILAYER STRUCTURE, HALL DEVICE, AND HALL DEVICE MANUFACTURING METHOD

Details for Australian Patent Application No. 2003201894 (hide)

Owner ASAHI KASEI ELECTRONICS CO., LTD.

Inventors WATANABE, Takayuki; SHIBATA, Yoshihiko; UJIHARA, Tsuyoshi; YOSHIDA, Takashi; OYAMA, Akihiko

Pub. Number AU-A-2003201894

PCT Number PCT/JP03/00291

PCT Pub. Number WO2003/061025

Priority 2002-6670 15.01.02 JP

Filing date 15 January 2003

Wipo publication date 30 July 2003

International Classifications

H01L 043/06 Devices using galvano-magnetic or similar magnetic effects - Hall-effect devices

H01L 029/778 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 029/812 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 043/14 Devices using galvano-magnetic or similar magnetic effects

G01R 033/07 Arrangements or instruments for measuring magnetic variables

H01L 021/338 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

3 April 2003 Complete Application Filed

  Priority application(s): 2002-6670 15.01.02 JP

4 September 2003 Application Open to Public Inspection

  Published as AU-A-2003201894

30 September 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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