SUBSTRATE TREATING METHOD AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

Details for Australian Patent Application No. 2002367179 (hide)

Owner TOKYO ELECTRON LIMITED

Inventors MATSUYAMA, Seiji; SASAKI, Masaru; SUGAWARA, Takuya

Pub. Number AU-A-2002367179

PCT Number PCT/JP02/13550

PCT Pub. Number WO2003/056622

Priority 2001-394546 26.12.01 JP

Filing date 25 December 2002

Wipo publication date 15 July 2003

International Classifications

H01L 021/324 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 029/78 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

4 September 2003 Application Open to Public Inspection

  Published as AU-A-2002367179

4 September 2003 Complete Application Filed

  Priority application(s): 2001-394546 26.12.01 JP

16 September 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

Legal

The information provided by the Site not in the nature of legal or other professional advice. The information provided by the Site is derived from third parties and may contain errors. You must make your own enquiries and seek independent advice from the relevant industry professionals before acting or relying on any information contained herein. Check the above data against the Australian Patent Office AUSPAT database.

Next and Previous Patents/Applications

2002367180-CONCENTRATION MEASURING METHOD

2002367178-ETCHING METHOD AND PLASMA ETCHING DEVICE