METHOD FOR FORMING AN OXYNITRIDE SPACER FOR A METAL GATE ELECTRODE USING A PECVD PROCESS WITH A SILICON-STARVING ATMOSPHERE

Details for Australian Patent Application No. 2002347877 (hide)

Owner ADVANCED MICRO DEVICES, INC.

Inventors HALLIYAL, Arvind; NGO, Minh, Van

Pub. Number AU-A-2002347877

PCT Number PCT/US02/32582

PCT Pub. Number WO2003/046971

Priority 09/994,128 26.11.01 US

Filing date 11 October 2002

Wipo publication date 10 June 2003

International Classifications

H01L 021/318 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/28 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 029/49 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

13 March 2003 Complete Application Filed

  Priority application(s): 09/994,128 26.11.01 US

21 August 2003 Application Open to Public Inspection

  Published as AU-A-2002347877

12 August 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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