Method of forming silicon thin film and silicon thin film solar cell

Details for Australian Patent Application No. 2002232197 (hide)

Owner Kaneka Corporation

Inventors Suezaki, Takashi; Kuribe, Eiji

Agent Davies Collison Cave

Pub. Number AU-B-2002232197

PCT Pub. Number WO2002/064854

Priority 2001-38601 15.02.01 JP; 2002-37223 14.02.02 JP

Filing date 15 February 2002

Wipo publication date 28 August 2002

Acceptance publication date 15 December 2005

International Classifications

C23C 16/24 (2006.01) Chemical deposition or plating by decomposition

H01L 21/205 (2006.01) Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 31/04 (2006.01) Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - adapted as conversion devices

Event Publications

20 February 2003 Application Open to Public Inspection

  Published as AU-B-2002232197

15 December 2005 Application Accepted

  Published as AU-B-2002232197

13 April 2006 Standard Patent Sealed

15 June 2006 Application for Amendment

  The nature of the amendment is as shown in the statement(s) filed 29 Mar 2006. Address for service in Australia - Davies Collison Cave Level 15 1 Nicholson MELStreet BOURNE VIC 3000 2003

9 November 2006 Amendment Made

  The nature of the amendment is as shown in the statement(s) filed 29 Mar 2006

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