Multilayer structure having semiconductor layer and layer-thickness measurement region, and thin-film photoelectric conversion device and integrated thin-film solar cell unit using same

Details for Australian Patent Application No. 2010219726 (hide)

Owner Sharp Kabushiki Kaisha

Inventors Nasuno, Yoshiyuki; Takeda, Tohru

Agent Davies Collison Cave

Pub. Number AU-A-2010219726

PCT Pub. Number WO2010/101116

Priority 2009-049214 03.03.09 JP

Filing date 1 March 2010

Wipo publication date 10 September 2010

International Classifications

H01L 31/042 (2006.01) Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - including a panel or array of photoelectric cells, e.g. solar cells

H01L 21/66 (2006.01) Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof - Testing or measuring during manufacture or treatment

Event Publications

15 September 2011 PCT application entered the National Phase

  PCT publication WO2010/101116 Priority application(s): WO2010/101116

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