Methods of making lateral junction field effect transistors using selective epitaxial growth

Details for Australian Patent Application No. 2009236500 (hide)

Owner SemiSouth Laboratories, Inc.

Inventors Merrett, Joseph Neil; Sankin, Igor

Agent Davies Collison Cave

Pub. Number AU-A-2009236500

PCT Pub. Number WO2009/129049

Priority 12/102,382 14.04.08 US

Filing date 1 April 2009

Wipo publication date 22 October 2009

International Classifications

H01L 21/20 (2006.01) Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 21/336 (2006.01) Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 29/78 (2006.01) Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

2 December 2010 PCT application entered the National Phase

  PCT publication WO2009/129049 Priority application(s): WO2009/129049

24 November 2011 Assignment before Grant

  SemiSouth Laboratories, Inc. The application has been assigned to SS SC IP, LLC

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