Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby

Details for Australian Patent Application No. 2009228841 (hide)

Owner Semisouth Laboratories, Inc.

Inventors Zhang, Jie

Agent Davies Collison Cave

Pub. Number AU-A-2009228841

PCT Pub. Number WO2009/120505

Priority 12/055,725 26.03.08 US

Filing date 12 March 2009

Wipo publication date 1 October 2009

International Classifications

C30B 23/06 (2006.01) Single-crystal growth from vapours

C30B 29/36 (2006.01) Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Event Publications

11 November 2010 PCT application entered the National Phase

  PCT publication WO2009/120505 Priority application(s): WO2009/120505

24 November 2011 Assignment before Grant

  Semisouth Laboratories, Inc. The application has been assigned to SS SC IP, LLC

Legal

The information provided by the Site not in the nature of legal or other professional advice. The information provided by the Site is derived from third parties and may contain errors. You must make your own enquiries and seek independent advice from the relevant industry professionals before acting or relying on any information contained herein. Check the above data against the Australian Patent Office AUSPAT database.

Next and Previous Patents/Applications

2009228847-Hydrogel intraocular lens and method of forming same

2009228832-Capsule for the prevention of cardiovascular diseases