Nitride nanowires and method of producing such

Details for Australian Patent Application No. 2008203934 (hide)

Owner Qunano AB

Inventors Asoli, Damir; Xhaoxia, Bi; Seifert, Werner

Agent Davies Collison Cave

Pub. Number AU-A-2008203934

PCT Pub. Number WO2008/085129

Priority 0700102-7 12.01.07 SE

Filing date 14 January 2008

Wipo publication date 17 July 2008

International Classifications

H01L 21/20 (2006.01) Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

B82B 1/00 (2006.01) Nano-structures

B82B 3/00 (2006.01) Manufacture or treatment of nano-structures

C30B 25/00 (2006.01) Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

H01L 29/06 (2006.01) Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

23 July 2009 PCT application entered the National Phase

  PCT publication WO2008/085129 Priority application(s): WO2008/085129

3 September 2009 Amendment Made

  The nature of the amendment is as shown in the statement(s) filed 29 Jul 2009

17 December 2009 Amendment Made

  The nature of the amendment is: Amend the name of the co-inventor from Xhaoxia, Bi to Bi, Zhaoxia

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