Pulsed growth of GaN nanowires and applications in group III nitride semiconductor substrate materials and devices

Details for Australian Patent Application No. 2007313096 (hide)

Owner STC.UNM

Inventors Sun, Xinyu; Hersee, Stephen M.; Wang, Xin

Agent Davies Collison Cave

Pub. Number AU-B-2007313096

PCT Pub. Number WO2008/048704

Priority 60/889,363 12.02.07 US; 60/808,153 25.05.06 US; 60/780,833 10.03.06 US; 60/798,337 08.05.06 US

Filing date 9 March 2007

Wipo publication date 24 April 2008

Acceptance publication date 10 November 2011

International Classifications

H01L 21/20 (2006.01) Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 31/0304 (2006.01) Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

Event Publications

18 September 2008 PCT application entered the National Phase

  PCT publication WO2008/048704 Priority application(s): WO2008/048704

10 November 2011 Application Accepted

  Published as AU-B-2007313096

8 March 2012 Standard Patent Sealed

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