Owner President and Fellows of Harvard College

Inventors Duan, Xiangfeng; Lieber, Charles M.; Cui, Ying; Huang, Yung-Sheng

Agent Pizzeys

Pub. Number AU-B-2007202897

Parent 2001286649

Filing date 22 June 2007

Wipo publication date 12 July 2007

Acceptance publication date 1 October 2009

H01L 29/73 (2006.01) Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

C30B 11/00 (2006.01) Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method

C30B 25/00 (2006.01) Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

G01N 27/12 (2006.01) Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means - of a solid body in dependence upon absorption of a fluid

G01N 27/414 (2006.01) Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means

G01N 33/543 (2006.01) Investigating or analysing materials by specific methods not covered by groups - with an insoluble carrier for immobilising immunochemicals

G11C 13/02 (2006.01) Digital stores characterised by the use of storage elements not covered by groups , , or - using elements whose operation depends upon chemical change

H01L 21/329 (2006.01) Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 21/331 (2006.01) Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 23/532 (2006.01) Details of semiconductor or other solid state devices

H01L 27/10 (2006.01) Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate - including a plurality of individual components in a repetitive configuration

H01L 29/06 (2006.01) Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 29/207 (2006.01) Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 29/267 (2006.01) Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 29/88 (2006.01) Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 33/00 (2006.01) Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission

H01L 51/30 (2006.01) Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part