Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making

Details for Australian Patent Application No. 2006322108 (hide)

Owner Semisouth Laboratories, Inc.

Inventors Merrett, Joseph Neil; Sankin, Igor

Agent Spruson & Ferguson

Pub. Number AU-B-2006322108

PCT Pub. Number WO2007/067458

Priority 11/293,261 05.12.05 US

Filing date 4 December 2006

Wipo publication date 14 June 2007

Acceptance publication date 14 April 2011

International Classifications

H01L 21/04 (2006.01) Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 29/737 (2006.01) Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 29/808 (2006.01) Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

3 July 2008 PCT application entered the National Phase

  PCT publication WO2007/067458 Priority application(s): WO2007/067458

14 April 2011 Application Accepted

  Published as AU-B-2006322108

11 August 2011 Standard Patent Sealed

10 November 2011 Assignment Registered

  Semisouth Laboratories, Inc. The patent has been assigned to SS SC IP, LLC

Legal

The information provided by the Site not in the nature of legal or other professional advice. The information provided by the Site is derived from third parties and may contain errors. You must make your own enquiries and seek independent advice from the relevant industry professionals before acting or relying on any information contained herein. Check the above data against the Australian Patent Office AUSPAT database.

Next and Previous Patents/Applications

2006322109-Cup and lid combination

2006322099-Cutting element for a retracting needle syringe