Vertical-channel junction field-effect transistors having buried gates and methods of making

Details for Australian Patent Application No. 2005335231 (hide)

Owner Mississippi State University SS SC IP, LLC

Inventors Cheng, Lin; Mazzola, Michael S.

Agent Spruson & Ferguson

Pub. Number AU-B-2005335231

PCT Pub. Number WO2007/018578

Priority 11/198,298 08.08.05 US

Filing date 16 November 2005

Wipo publication date 15 February 2007

Acceptance publication date 5 July 2012

International Classifications

H01L 29/74 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 29/80 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 31/111 Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

H01L 31/112 Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

Event Publications

13 March 2008 PCT application entered the National Phase

  PCT publication WO2007/018578 Priority application(s): WO2007/018578

1 December 2011 Assignment before Grant

  Semisouth Laboratories, Inc.; Mississippi State University The application has been assigned to Mississippi State University; SS SC IP, LLC 2006

5 July 2012 Application Accepted

  Published as AU-B-2005335231

1 November 2012 Standard Patent Sealed

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