Monolithic vertical junction field effect transistor and Schottky barrier diode fabricated from silicon carbide and method for fabricating the same

Details for Australian Patent Application No. 2005333516 (hide)

International Classifications

Event Publications

15 February 2007 Application Open to Public Inspection

Published as AU-B-2005333516

15 February 2007 PCT application entered the National Phase

PCT publication WO2007/001316 Priority application(s): WO2007/001316

25 September 2008 Corrigenda

PCT applications that have entered the National Phase - Name Index Under the name Semisouth Laboratories, Inc., Application No. 2005333516, under INID(43), correct the date to read 04.01.2007

21 April 2011 Application Accepted

Published as AU-B-2005333516

18 August 2011 Standard Patent Sealed

1 December 2011 Assignment Registered

Mississippi State University; Semisouth Laboratories, Inc. The patent has been assigned to Mississippi State University; SS SC IP, LLC

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