Wide bandgap semiconductor lateral trench FET and method of making

Details for Australian Patent Application No. 2005312118 (hide)

Owner Semisouth Laboratories, Inc.

Inventors Casady, Jeffrey B.; Merrett, Jospeh N.; Sankin, Igor

Agent Spruson & Ferguson

Pub. Number AU-B-2005312118

PCT Pub. Number WO2006/060302

Priority 10/999,954 01.12.04 US

Filing date 30 November 2005

Wipo publication date 8 June 2006

Acceptance publication date 6 October 2011

International Classifications

H01L 29/74 (2006.01) Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 29/423 (2006.01) Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 31/111 (2006.01) Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

Event Publications

5 July 2007 PCT application entered the National Phase

  PCT publication WO2006/060302 Priority application(s): WO2006/060302

6 October 2011 Application Accepted

  Published as AU-B-2005312118

10 November 2011 Assignment before Grant

  Semisouth Laboratories, Inc. The application has been assigned to SS SC IP, LLC 2006

2 February 2012 Standard Patent Sealed

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