Field effect transistor employing an amorphous oxide

Details for Australian Patent Application No. 2005302964 (hide)

Owner Canon Kabushiki Kaisha Tokyo Institute of Technology

Inventors Hosono, Hideo; Sano, Masafumi; Nomura, Kenji; Nakagawa, Katsumi; Kamiya, Toshio

Agent Spruson & Ferguson

Pub. Number AU-B-2005302964

PCT Pub. Number WO2006/051995

Priority 2004-326683 10.11.04 JP

Filing date 9 November 2005

Wipo publication date 18 May 2006

Acceptance publication date 4 November 2010

International Classifications

H01L 29/786 (2006.01) Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 21/363 (2006.01) Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

24 May 2007 PCT application entered the National Phase

  PCT publication WO2006/051995 Priority application(s): WO2006/051995

4 November 2010 Application Accepted

  Published as AU-B-2005302964

3 March 2011 Standard Patent Sealed

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