Silicon-rich nickel-silicide ohmic contacts for SiC semiconductor devices

Details for Australian Patent Application No. 2005270089 (hide)

Owner Cree, Inc.

Inventors Ward, Alan III; Hagleitner, Helmut; Wieber, Keith Dennis; Henning, Jason Patrick

Agent Griffith Hack

Pub. Number AU-A-2005270089

PCT Pub. Number WO2006/014346

Priority 10/884,930 06.07.04 US

Filing date 30 June 2005

Wipo publication date 9 February 2006

International Classifications

H01L 21/28 (2006.01) Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 29/45 (2006.01) Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

1 February 2007 PCT application entered the National Phase

  PCT publication WO2006/014346 Priority application(s): WO2006/014346

4 February 2010 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(e). Examination has been requested or an examination report has issued for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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