Cooled lump from molten silicon and process for producing the same

Details for Australian Patent Application No. 2005245291 (hide)

Owner Tokuyama Corporation

Inventors Nakashima, Junichirou; Sugimura, Shigeki; Wakamatsu, Satoru

Agent Davies Collison Cave

Pub. Number AU-B-2005245291

PCT Pub. Number WO2005/113436

Priority 2004-152189 21.05.04 JP

Filing date 23 May 2005

Wipo publication date 1 December 2005

Acceptance publication date 26 March 2009

International Classifications

C01B 33/02 (2006.01) Silicon

C30B 11/00 (2006.01) Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method

C30B 11/04 (2006.01) Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method

C30B 29/06 (2006.01) Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape - Silicon

Event Publications

25 January 2007 PCT application entered the National Phase

  PCT publication WO2005/113436 Priority application(s): WO2005/113436

26 March 2009 Application Accepted

  Published as AU-B-2005245291

23 July 2009 Standard Patent Sealed

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