Ion sensitive field effect transistor (ISFET) sensor with improved gate configuration

Details for Australian Patent Application No. 2005208303 (hide)

International Classifications

Event Publications

30 March 2006 PCT application entered the National Phase

PCT publication WO2005/073706 Priority application(s): WO2005/073706

12 August 2010 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

This application lapsed under section 142(2)(d). Examination has been requested or an examination report has issued for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

Legal

The information provided by the Site not in the nature of legal or other professional advice. The information provided by the Site is derived from third parties and may contain errors. You must make your own enquiries and seek independent advice from the relevant industry professionals before acting or relying on any information contained herein. Check the above data against the Australian Patent Office AUSPAT database.