Method of producing self-supporting substrates comprising III-nitrides by means of heteroepitaxy on a sacrificial layer

Details for Australian Patent Application No. 2004276541 (hide)

Owner Centre National de la Recherche Scientifique (CNRS)

Inventors Bougrioua, Zahia; Feltin, Eric Pascal; Nataf, Gilles

Agent Phillips Ormonde Fitzpatrick

Pub. Number AU-B-2004276541

PCT Pub. Number WO2005/031045

Priority 0311296 26.09.03 FR

Filing date 24 September 2004

Wipo publication date 7 April 2005

Acceptance publication date 28 May 2009

International Classifications

C30B 25/02 (2006.01) Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Epitaxial-layer growth

C30B 25/18 (2006.01) Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - characterised by the substrate

H01L 21/20 (2006.01) Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

18 May 2006 PCT application entered the National Phase

  PCT publication WO2005/031045 Priority application(s): WO2005/031045

28 May 2009 Application Accepted

  Published as AU-B-2004276541

24 September 2009 Standard Patent Sealed

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