A NOVEL MONOLITHIC, COMBO NONVOLATILE MEMORY ALLOWING BYTE, PAGE AND BLOCK WRITE WITH NO DISTURB AND DIVIDEDWELL IN THE CELL ARRAY USING A UNIFIED CELL STRUCTURE AND TECHNOLOGY WITH A NEW SCHEME OF DECODER AND LAYOUT

Details for Australian Patent Application No. 2003301939 (hide)

Owner Aplus Flash Technology, Inc.

Inventors LEE, Peter, W.; HSU, Fu-Chang; TSAO, Hsing-Ya; MA, Han-Rei

Pub. Number AU-A-2003301939

PCT Number PCT/US2003/0328

PCT Pub. Number WO2004/044921

Priority 60/426,614 14.11.02 US; 60/429,261 25.11.02 US; 10/351,180 24.01.03 US

Filing date 16 October 2003

Wipo publication date 3 June 2004

International Classifications

G11C 016/04 Erasable programmable read-only memories - using variable threshold transistors, e.g. FAMOS

Event Publications

1 July 2004 Complete Application Filed

  Priority application(s): 60/426,614 14.11.02 US; 60/429,261 25.11.02 US; 10/351,180 24.01.03 US

8 July 2004 Application Open to Public Inspection

  Published as AU-A-2003301939

28 July 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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