NITROGEN OXIDATION OF ETCHED MOS GATE STRUCTURE

Details for Australian Patent Application No. 2003301768 (hide)

Owner ADVANCED MICRO DEVICES, INC.

Inventors HE, Yue-Song; FASTOW, Richard, M.; WANG, Zhi-Gang

Pub. Number AU-A-2003301768

PCT Number PCT/US2003/0184

PCT Pub. Number WO2004/042808

Priority 10/284,866 30.10.02 US

Filing date 10 June 2003

Wipo publication date 7 June 2004

International Classifications

H01L 021/28 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/336 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

24 June 2004 Complete Application Filed

  Priority application(s): 10/284,866 30.10.02 US

1 July 2004 Application Open to Public Inspection

  Published as AU-A-2003301768

21 July 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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