METHOD OF MEASURING POINT DEFECT DISTRIBUTION OF SILICON SINGLE CRYSTAL INGOT

Details for Australian Patent Application No. 2003301326 (hide)

Owner SUMITOMO MITSUBISHI SILICON CORPORATION

Inventors KURITA, Kazunari; FURUKAWA, Jun

Pub. Number AU-A-2003301326

PCT Number PCT/JP2003/0133

PCT Pub. Number WO2004/035879

Priority 2002-304410 18.10.02 JP

Filing date 17 October 2003

Wipo publication date 4 May 2004

International Classifications

C30B 029/06 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape - Silicon

G01N 027/04 Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means - by investigating resistance

Event Publications

3 June 2004 Complete Application Filed

  Priority application(s): 2002-304410 18.10.02 JP

10 June 2004 Application Open to Public Inspection

  Published as AU-A-2003301326

21 July 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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