GALLIUM NITRIDE CRYSTAL, HOMOEPITAXIAL GALLIUM-NITRIDE-BASED DEVICES AND METHOD FOR PRODUCING SAME

Details for Australian Patent Application No. 2003299899 (hide)

Owner GENERAL ELECTRIC COMPANY

Inventors D'EVELYN, Mark, Phillip; PARK, DongSil; LEBOEUF, Steven, Francis; ROWLAND, Larry, Burton; NARANG, Kristi, Jean; HONG, Huicong; SANDVIK, Peter, Micah

Pub. Number AU-A-2003299899

PCT Number PCT/US2003/0412

PCT Pub. Number WO2004/061923

Priority 10/329,981 27.12.02 US; 10/329,982 27.12.02 US

Filing date 22 December 2003

Wipo publication date 29 July 2004

International Classifications

H01L 021/20 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/02 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof -

C30B 025/20 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

C30B 029/40 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

C30B 009/12 Single-crystal growth from melt solutions using molten solvents

Event Publications

27 May 2004 Complete Application Filed

  Priority application(s): 10/329,981 27.12.02 US; 10/329,982 27.12.02 US

2 September 2004 Application Open to Public Inspection

  Published as AU-A-2003299899

22 September 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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