VERTICAL JFET LIMITED SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS AND METHODS OF FABRICATING VERTICAL JFET LIMITED SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS

Details for Australian Patent Application No. 2003299587 (hide)

Owner CREE, INC.

Inventors RYU, Sei-Hyung

Pub. Number AU-A-2003299587

PCT Number PCT/US2003/0384

PCT Pub. Number WO2004/061974

Priority 60/435,212 20.12.02 US; 10/698,170 30.10.03 US

Filing date 4 December 2003

Wipo publication date 29 July 2004

International Classifications

H01L 029/78 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 029/24 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 021/04 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

27 May 2004 Complete Application Filed

  Priority application(s): 60/435,212 20.12.02 US; 10/698,170 30.10.03 US

2 September 2004 Application Open to Public Inspection

  Published as AU-A-2003299587

22 September 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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