METHOD OF DETACHING A THIN FILM AT MODERATE TEMPERATURE AFTER CO-IMPLANTATION

Details for Australian Patent Application No. 2003298137 (hide)

Event Publications

6 May 2004 Complete Application Filed

Priority application(s): 02/13935 07.11.02 FR

1 July 2004 Application Open to Public Inspection

Published as AU-A-2003298137

21 July 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

1 September 2005 Corrigenda

Applications OPI - Name Index Under the name S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES, Application No. 2003298137, under INID (71) correct the name to read COMMISSARIAT A L'ENERGIE ATOMIQUE; S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES

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