TRENCH MOSFET HAVING IMPLANTED DRAIN-DRIFT REGION AND PROCESS FOR MANUFACTURING THE SAME

Details for Australian Patent Application No. 2003296987 (hide)

Owner SILICONIX INCORPORATED

Inventors DARWISH, Mohamed, N.

Pub. Number AU-A-2003296987

PCT Number PCT/US2003/0396

PCT Pub. Number WO2004/054000

Priority 10/317,568 12.12.02 US

Filing date 12 December 2003

Wipo publication date 30 June 2004

International Classifications

H01L 029/78 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 021/336 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 029/08 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

6 May 2004 Complete Application Filed

  Priority application(s): 10/317,568 12.12.02 US

5 August 2004 Application Open to Public Inspection

  Published as AU-A-2003296987

8 September 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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