METHOD OF PRODUCING SILICON MONOCRYSTAL

Details for Australian Patent Application No. 2003290909 (hide)

Owner SUMITOMO MITSUBISHI SILICON CORPORATION

Inventors WAKABAYASHI, Daisuke; SAITO, Masao; SATO, Satoshi; FURUKAWA, Jun; KITAMURA, Kounosuke

Pub. Number AU-A-2003290909

PCT Number PCT/JP2003/0085

PCT Pub. Number WO2004/018742

Priority 2002-197140 05.07.02 JP

Filing date 7 July 2003

Wipo publication date 11 March 2004

International Classifications

C30B 029/06 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape - Silicon

C30B 015/26 Single-crystal growth by pulling from a melt, e.g. Czochralski method

H01L 021/208 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

8 April 2004 Complete Application Filed

  Priority application(s): 2002-197140 05.07.02 JP

22 April 2004 Application Open to Public Inspection

  Published as AU-A-2003290909

21 July 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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