FIELD EFFECT TRANSISTOR USING INSULATOR-SEMICONDUCTOR TRANSITION MATERIAL LAYER AS CHANNEL MATERIAL AND METHOD OF MANUFACTURING THE SAME

Details for Australian Patent Application No. 2003288774 (hide)

Owner ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventors YOUN, Doo-Hyeb; CHAE, Byung-Gyu; KIM, Hyun-Tak; KANG, Kwang-Yong

Pub. Number AU-A-2003288774

PCT Number PCT/KR2003/0028

PCT Pub. Number WO2004/105139

Priority 10-2003-0031903 20.05.03 KR

Filing date 30 December 2003

Wipo publication date 13 December 2004

International Classifications

H01L 029/772 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

1 April 2004 Complete Application Filed

  Priority application(s): 10-2003-0031903 20.05.03 KR

20 January 2005 Application Open to Public Inspection

  Published as AU-A-2003288774

9 February 2006 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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