METHOD OF FORMING A THICK STRAINED SILICON LAYER AND SEMICONDUCTOR STRUCTURES INCORPORATING A THICK STRAINED SILICON LAYER

Details for Australian Patent Application No. 2003286810 (hide)

International Classifications

Event Publications

1 April 2004 Complete Application Filed

Priority application(s): 10/335,447 31.12.02 US

2 September 2004 Application Open to Public Inspection

Published as AU-A-2003286810

15 September 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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