METHOD OF FORMING A NICKEL SILICIDE REGION IN A DOPED SILICON-CONTAINING SEMICONDUCTOR AREA

Details for Australian Patent Application No. 2003286699 (hide)

Owner ADVANCED MICRO DEVICES, INC.

Inventors KAMMLER, Thorsten; WIECZOREK, Karsten; LENSKI, Markus

Pub. Number AU-A-2003286699

PCT Number PCT/US2003/0339

PCT Pub. Number WO2004/042809

Priority 10/440,656 19.05.03 US; 102 50 611.6 30.10.02 DE

Filing date 27 October 2003

Wipo publication date 7 June 2004

International Classifications

H01L 021/285 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

1 April 2004 Complete Application Filed

  Priority application(s): 10/440,656 19.05.03 US; 102 50 611.6 30.10.02 DE

1 July 2004 Application Open to Public Inspection

  Published as AU-A-2003286699

21 July 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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