MEMORY DEVICE HAVING A P+ GATE AND THIN BOTTOM OXIDE AND METHOD OF ERASING SAME

Details for Australian Patent Application No. 2003275180 (hide)

Owner ADVANCED MICRO DEVICES, INC.

Inventors ZHENG, Wei; CHANG, Chi; KAMAL, Tazrien

Pub. Number AU-A-2003275180

PCT Number PCT/US03/30000

PCT Pub. Number WO2004/066396

Priority 10/341,881 14.01.03 US

Filing date 24 September 2003

Wipo publication date 13 August 2004

International Classifications

H01L 029/792 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 029/788 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

12 February 2004 Complete Application Filed

  Priority application(s): 10/341,881 14.01.03 US

16 September 2004 Application Open to Public Inspection

  Published as AU-A-2003275180

13 October 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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