POLYCRYSTALLINE SILICON SUBSTRATE

Details for Australian Patent Application No. 2003269502 (hide)

Owner CANON KABUSHIKI KAISHA

Inventors ISHIHARA, Shunichi; NAKAGAWA, Katsumi; SATO, Hiroshi; YOSHINO, Takehito; NISHIDA, Shoji; UKIYO, Noritaka; IWANE, Masaaki; IWASAKI, Yukiko; MIZUTANI, Masaki

Pub. Number AU-A-2003269502

PCT Number PCT/JP03/13074

PCT Pub. Number WO2004/036657

Priority NO. 2002-302286 16.10.02 JP

Filing date 10 October 2003

Wipo publication date 4 May 2004

International Classifications

H01L 031/04 Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation - adapted as conversion devices

C30B 029/06 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape - Silicon

C01B 033/02 Silicon

Event Publications

15 January 2004 Complete Application Filed

  Priority application(s): NO. 2002-302286 16.10.02 JP

10 June 2004 Application Open to Public Inspection

  Published as AU-A-2003269502

30 June 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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