GaN-TYPE ENHANCEMENT MOSFET USING HETERO STRUCTURE

Details for Australian Patent Application No. 2003265691 (hide)

Owner UNIVERSITY OF FLORIDA

Inventors REN, Fan; ABERNATHY, Cammy, Rene; PEARTON, Stephen, J.; IROKAWA, Yoshihiro

Pub. Number AU-A-2003265691

PCT Number PCT/US03/26706

PCT Pub. Number WO2004/019415

Priority 60/405,964 26.08.02 US

Filing date 26 August 2003

Wipo publication date 11 March 2004

International Classifications

H01L 029/778 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 029/78 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

18 December 2003 Complete Application Filed

  Priority application(s): 60/405,964 26.08.02 US

22 April 2004 Application Open to Public Inspection

  Published as AU-A-2003265691

9 June 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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