DOUBLE-GATE TYPE MOS FIELD EFFECT TRANSISTOR AND PRODUCTION METHOD THEREFOR

Details for Australian Patent Application No. 2003264342 (hide)

Owner NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventors MASAHARA, Meishoku

Pub. Number AU-A-2003264342

PCT Number PCT/JP03/10933

PCT Pub. Number WO2004/021445

Priority 2002-248814 28.08.02 JP

Filing date 28 August 2003

Wipo publication date 19 March 2004

International Classifications

H01L 029/78 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 021/336 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 029/41 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 029/417 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 029/423 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 029/49 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

Event Publications

11 December 2003 Complete Application Filed

  Priority application(s): 2002-248814 28.08.02 JP

6 May 2004 Application Open to Public Inspection

  Published as AU-A-2003264342

9 June 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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