HIGH DENSITY RECORDING MEDIUM WITH SUPER-RESOLUTION NEAR-FIELD STRUCTURE MANUFACTURED USING HIGH-MELTING POINT METAL OXIDE OR SILICON OXIDE MASK LAYER

Details for Australian Patent Application No. 2003263652 (hide)

International Classifications

Event Publications

11 December 2003 Complete Application Filed

Priority application(s): 2002-281783 26.09.02 JP

20 May 2004 Application Open to Public Inspection

Published as AU-A-2003263652

9 June 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

25 August 2005 Corrigenda

Applications OPI - Name Index Under the name SAMSUNG ELECTRONICS CO., LTD., Application No. 2003263652, under INID (71) correct the name to read NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY; SAMSUNG ELECTRONICS CO., LTD.

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