TECHNIQUES FOR REDUCING EFFECTS OF COUPLING BETWEEN STORAGE ELEMENTS OF ADJACENT ROWS OF MEMORY CELLS

Details for Australian Patent Application No. 2003262675 (hide)

Owner SANDISK CORPORATION

Inventors QUADER, Khandker, N.; LI, Yan; CHEN, Jian; FONG, Yupin; CERNEA, Raul-Adrian

Pub. Number AU-A-2003262675

PCT Number PCT/US03/25512

PCT Pub. Number WO2004/023489

Priority 10/237,426 06.09.02 US

Filing date 13 August 2003

Wipo publication date 29 March 2004

International Classifications

G11C 011/56 Digital stores characterised by the use of particular electric or magnetic storage elements - using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency

G11C 016/04 Erasable programmable read-only memories - using variable threshold transistors, e.g. FAMOS

G11C 016/34 Erasable programmable read-only memories

Event Publications

11 December 2003 Complete Application Filed

  Priority application(s): 10/237,426 06.09.02 US

13 May 2004 Application Open to Public Inspection

  Published as AU-A-2003262675

2 June 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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