GROWTH OF PLANAR, NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY

Details for Australian Patent Application No. 2003256522 (hide)

Owner THE REGENTS OF UNIVERSITY OF CALIFORNIA

Inventors MATSUDA, Shigemasa; CRAVEN, Michael, D.; DENBAARS, Steven, P.; SPECK, Jame, S.; NAKAMURA, Shuji; HASKELL, Benjamin, A.; FINI, Paul, T.

Pub. Number AU-A-2003256522

PCT Number PCT/US03/21916

PCT Pub. Number WO2004/061969

Priority 60/433,844 16.12.02 US; 60/433,843 16.12.02 US

Filing date 15 July 2003

Wipo publication date 29 July 2004

International Classifications

H01L 029/22 Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier

H01L 051/40 Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part

Event Publications

6 November 2003 Complete Application Filed

  Priority application(s): 60/433,844 16.12.02 US; 60/433,843 16.12.02 US

2 September 2004 Application Open to Public Inspection

  Published as AU-A-2003256522

1 September 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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