LATERAL MOVEMENT OF SCREW DISLOCATIONS DURING HOMOEPITAXIAL GROWTH AND DEVICES YIELDED THEREFROM FREE OF THE DETRIMENTAL EFFECTSOF THE SCREW DISLOCATIONS

Details for Australian Patent Application No. 2003243369 (hide)

Owner The Government of the United States of America, as represented by the Administrator of the National Aeronautics and Space Administration (NASA)

Inventors NEUDECK, Philip, G.; POWELL, J. Anthony

Pub. Number AU-A-2003243369

PCT Number PCT/US03/17346

PCT Pub. Number WO2004/033768

Priority 10/268,749 10.10.02 US

Filing date 3 June 2003

Wipo publication date 4 May 2004

International Classifications

C30B 025/02 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Epitaxial-layer growth

H01L 021/20 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

C30B 025/20 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth

Event Publications

11 September 2003 Complete Application Filed

  Priority application(s): 10/268,749 10.10.02 US

3 June 2004 Application Open to Public Inspection

  Published as AU-A-2003243369

30 June 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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