METHODS FOR TRANSFERRING A LAYER ONTO A SUBSTRATE

Details for Australian Patent Application No. 2003237399 (hide)

Owner LEE, Tien-Hsi

Inventors LEE, Tien-Hsi

Pub. Number AU-A-2003237399

PCT Number PCT/US03/17679

PCT Pub. Number WO2003/103026

Priority 60/385,333 03.06.02 US

Filing date 3 June 2003

Wipo publication date 19 December 2003

International Classifications

H01L 021/00 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

C30B 025/02 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Epitaxial-layer growth

C30B 025/04 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Pattern deposit, e.g. by using masks

Event Publications

11 September 2003 Complete Application Filed

  Priority application(s): 60/385,333 03.06.02 US

12 February 2004 Application Open to Public Inspection

  Published as AU-A-2003237399

17 February 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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