VAPOR PHASE GROWTH METHOD FOR Al-CONTAINING III-V GROUP COMPOUND SEMICONDUCTOR, AND METHOD AND DEVICE FOR PRODUCING Al-CONTAINING III-V GROUP COMPOUND SEMICONDUCTOR

Details for Australian Patent Application No. 2003236306 (hide)

Owner TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY TLO CO.,LTD.

Inventors MARUI, Tomohiro; KOUKITSU, Akinori; KUMAGAI, Yoshinao

Pub. Number AU-A-2003236306

PCT Number PCT/JP03/04408

PCT Pub. Number WO2003/085711

Priority 2002-106102 09.04.02 JP

Filing date 7 April 2003

Wipo publication date 20 October 2003

International Classifications

H01L 021/205 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

C30B 023/02 Single-crystal growth from vapours - Epitaxial-layer growth

C30B 025/14 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Feed and outlet means for the gases

C30B 029/38 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

C30B 029/40 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

C23C 016/34 Chemical deposition or plating by decomposition - Nitrides

Event Publications

4 September 2003 Complete Application Filed

  Priority application(s): 2002-106102 09.04.02 JP

27 November 2003 Application Open to Public Inspection

  Published as AU-A-2003236306

27 January 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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