POWER SEMICONDUCTOR DEVICE HAVING A VOLTAGE SUSTAINING REGION THAT INCLUDES DOPED COLUMNS FORMED WITH A SINGLE ION IMPLANTATION STEP

Details for Australian Patent Application No. 2003230699 (hide)

Event Publications

14 August 2003 Complete Application Filed

Priority application(s): 10/103,674 21.03.02 US

13 November 2003 Application Open to Public Inspection

Published as AU-A-2003230699

13 January 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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