NON-POLAR A-PLANE GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION

Details for Australian Patent Application No. 2003228497 (hide)

Owner THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventors CRAVEN, Michael, D.; SPECK, James, S.

Pub. Number AU-A-2003228497

PCT Number PCT/US03/11176

PCT Pub. Number WO2003/089695

Priority 60/372,909 15.04.02 US

Filing date 15 April 2003

Wipo publication date 3 November 2003

International Classifications

C30B 025/02 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Epitaxial-layer growth

H01L 033/00 Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission

H01L 021/00 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/20 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

14 August 2003 Complete Application Filed

  Priority application(s): 60/372,909 15.04.02 US

11 December 2003 Application Open to Public Inspection

  Published as AU-A-2003228497

6 January 2005 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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