METHOD FOR PRODUCTION OF A LAYER OF SILICON CARBIDE OR A NITRIDE OF A GROUP III ELEMENT ON A SUITABLE SUBSTRATE

Details for Australian Patent Application No. 2003222909 (hide)

Owner CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

Inventors LEYCURAS, Andre

Pub. Number AU-A-2003222909

PCT Number PCT/FR03/00474

PCT Pub. Number WO2003/069657

Priority 02/01941 15.02.02 FR

Filing date 13 February 2003

Wipo publication date 4 September 2003

International Classifications

H01L 021/20 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

C30B 025/18 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - characterised by the substrate

C30B 029/36 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

C30B 029/40 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Event Publications

7 August 2003 Complete Application Filed

  Priority application(s): 02/01941 15.02.02 FR

2 October 2003 Application Open to Public Inspection

  Published as AU-A-2003222909

25 November 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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