METHODS OF TREATING A SILICON CARBIDE SUBSTRATE FOR IMPROVED EPITAXIAL DEPOSITION AND RESULTING STRUCTURES AND DEVICES

Details for Australian Patent Application No. 2003210882 (hide)

Owner CREE, INC.

Inventors SUVOROV, Alexander; EDMOND, John, Adam; SLATER, David, Beardsley, Jr.; McCLURE, Davis, Andrew

Pub. Number AU-A-2003210882

PCT Number PCT/US03/03602

PCT Pub. Number WO2003/067637

Priority 60/355,034 08.02.02 US

Filing date 7 February 2003

Wipo publication date 2 September 2003

International Classifications

H01L 021/20 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

C30B 029/32 Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

H01L 033/00 Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission

Event Publications

17 July 2003 Complete Application Filed

  Priority application(s): 60/355,034 08.02.02 US

25 September 2003 Application Open to Public Inspection

  Published as AU-A-2003210882

28 October 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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