METHOD AND DEVICE FOR DEPOSITING SEMI-CONDUCTOR LAYERS

Details for Australian Patent Application No. 2003208860 (hide)

Owner AIXTRON AG

Inventors JURGENSEN, Holger; STRAUCH, Gerd

Pub. Number AU-A-2003208860

PCT Number PCT/EP03/01549

PCT Pub. Number WO2003/071011

Priority 102 07 461.5 22.02.02 DE

Filing date 15 February 2003

Wipo publication date 9 September 2003

International Classifications

C30B 025/14 Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth - Feed and outlet means for the gases

C23C 016/30 Chemical deposition or plating by decomposition - Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides

C23C 016/455 Chemical deposition or plating by decomposition - characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber

Event Publications

17 July 2003 Complete Application Filed

  Priority application(s): 102 07 461.5 22.02.02 DE

9 October 2003 Application Open to Public Inspection

  Published as AU-A-2003208860

11 November 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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