METHOD FOR DOPING GALLIUM NITRIDE (GaN) SUBSTRATES AND THE RESULTING DOPED GaN SUBSTRATE

Details for Australian Patent Application No. 2003205215 (hide)

Owner GAN SEMICONDUCTOR, INC.

Inventors CHO, Hak, Dong; KANG, Sang, Kyu

Pub. Number AU-A-2003205215

PCT Number PCT/US03/01538

PCT Pub. Number WO2003/063206

Priority 10/052,480 17.01.02 US

Filing date 16 January 2003

Wipo publication date 2 September 2003

Event Publications

17 July 2003 Complete Application Filed

  Priority application(s): 10/052,480 17.01.02 US

18 September 2003 Application Open to Public Inspection

  Published as AU-A-2003205215

7 October 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

Legal

The information provided by the Site not in the nature of legal or other professional advice. The information provided by the Site is derived from third parties and may contain errors. You must make your own enquiries and seek independent advice from the relevant industry professionals before acting or relying on any information contained herein. Check the above data against the Australian Patent Office AUSPAT database.

Next and Previous Patents/Applications

2003205216-SOLDER-DROSS MIXTURE SEPARATION METHOD AND APPARATUS

2003205214-DECOMPOSITION OF HYDROGEN PEROXIDE AND OXIDATION OF NITRIC OXIDE