OPTIMIZED METHOD OF TRANSFER OF A THIN LAYER OF SILICON CARBIDE TO A RECEIVING SUBSTRATE

Details for Australian Patent Application No. 2003202589 (hide)

Owner S.O.I.TEC SILICON INSULATOR TECHNOLOGIES

Inventors LETERTRE, Fabrice; GHYSELEN, Bruno

Pub. Number AU-A-2003202589

PCT Number PCT/EP03/00692

PCT Pub. Number WO2003/063213

Priority 0200813 23.01.02 FR

Filing date 21 January 2003

Wipo publication date 2 September 2003

International Classifications

H01L 021/18 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/265 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/762 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/20 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

H01L 021/76 Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Event Publications

10 April 2003 Complete Application Filed

  Priority application(s): 0200813 23.01.02 FR

18 September 2003 Application Open to Public Inspection

  Published as AU-A-2003202589

7 October 2004 Application Lapsed, Refused Or Withdrawn, Patent Ceased or Expired

  This application lapsed under section 142(2)(f)/See Reg. 8.3(3). Examination has not yet been requested or directed for this application. Note that applications or patents shown as lapsed or ceased may be restored at a later date.

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